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1.2V Drive Nch MOSFET
RUE002N02
Structure
Silicon N-channel
MOSFET
Applications
Switching
Features
Dimensions (Unit : mm)
EMT3
(1)Source
(2)Gate
1) Fast switching speed.
2) Low voltage drive (1.2V) makes this
device ideal for portable equipment.
3) Drive circuits can be simple.
(3)Drain
Inner circuit
Abbreviated symbol : QR
(3)
Packaging specifications
Package
Taping
Type
Code
Basic ordering unit
(pieces)
TL
3000
(2)
? 2
RUE002N02
? 1
Absolute maximum ratings (Ta=25 ° C)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(1)
(1) Source
(2) Gate
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
20
± 8
Unit
V
V
Drain current
Continuous
Pulsed
I D
I DP ? 1
± 200
± 400
mA
mA
Total power dissipation
Channel temperature
Range of storage temperature
P D ? 2
Tch
Tstg
150
150
? 55 to + 150
mW
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Each terminal mounted on a recommended land
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
833
Unit
° C / W
? Each terminal mounted on a recommended land
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2009.06 - Rev.A
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